SPLIT-OFF EXCITON AND PHONON-DEPENDENT LINESHAPE AT OPTICAL EDGE OF SILICON

被引：8

作者：

EVANGELISTI, F

KANE, EO

ZANINI, M

FROVA, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 11卷 / 05期

关键词：

D O I：

10.1016/0038-1098(72)90472-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：611 / +

页数：1

共 11 条

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[6]

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[8] ENERGY LEVELS OF INDIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

LIPARI, NO ;

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[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

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