DETERMINATION OF ABSOLUTE VALUES AND SIGNS OF 111 AND 222 STRUCTURE FACTORS OF SILICON

被引：8

作者：

ANDO, Y ^{[1
]}

ICHIMIYA, A ^{[1
]}

UYEDA, R ^{[1
]}

机构：

[1] NAGOYA UNIV,FAC ENGN,DEPT APPL PHYS,NAGOYA,JAPAN

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1974年 / A 30卷 / JUL1期

关键词：

D O I：

10.1107/S0567739474001409

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：600 / 601

页数：2

共 10 条

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[3] X-RAY SCATTERING FACTORS COMPUTED FROM NUMERICAL HARTREE-FOCK WAVE FUNCTIONS
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[6] GOTTLICHER S, 1959, Z ELEKTROCHEM, V63, P891
[7] ABSOLUTE MEASUREMENT OF STRUCTURE FACTORS OF SI SINGLE CRYSTAL BY MEANS OF X-RAY PENDELLOSUNG FRINGES
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[8] NEW METHODS OF DETERMINING FOURIER COEFFICIENTS OF CRYSTAL POTENTIAL FROM THICKNESS FRINGES IN ELECTRON MICROGRAPHS
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[9] DETERMINATION OF STRUCTURE POTENTIALS AND ABSORPTION POTENTIALS OF SILICON FROM ELECTRON DIFFRACTION INTENSITIES
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[10] ABSOLUTE MEASUREMENT OF STRUCTURE FACTORS OF SI BY USING X-RAY PENDELLOSUNG AND INTERFEROMETRY FRINGES
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