ELECTRICAL CHARACTERIZATION OF SCHOTTKY DIODES ON VERY LOW-ENERGY ION-ETCHED GAAS-SURFACES

被引：11

作者：

NEFFATI, T

LU, GN

BARRET, C

机构：

[1] CNRS, Orsay, Fr, CNRS, Orsay, Fr

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

D O I：

10.1016/0038-1101(88)90434-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1335 / 1342

页数：8

共 40 条

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