IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON

被引：4

作者：

FANG, PH

TARKO, H

DREVINSK.PJ

ILES, P

机构：

来源：

关键词：

D O I：

10.1063/1.1653256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：426 / &

共 8 条

[1]

CORELLI JC, 1968, B AM PHYS SOC, V13, P359

[2]

CORELLI JC, PRIVATE COMMUNICATIO

[3] IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN SILICON [J].

FANG, PH ;

ILES, P .

[4]

FANG PH, 1965, X71365468 GODD SPAC

[5] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON [J].

HIRATA, M ;

SAITO, H .

[6]

Pauling L., 1960, NATURE CHEM BOND, P246

WATKINS, GD .

PHYSICAL REVIEW, 1967, 155 (03) :802-&

[8]

F1962867C0043 CONTR