IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN SILICON

被引：5

作者：

FANG, PH

ILES, P

机构：

[1] Centralab Semiconductors, Globe Union Inc., El Monte

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 04期

关键词：

D O I：

10.1063/1.1652745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A shift of about 100°C is observed in the isochronal annealing temperature of the dominant annealing stage in p-on-n silicon solar cells with a heavy donor concentration of 1017 cm-3 in the n region and low oxygen concentration in the crystal. © 1969 The American Institute of Physics.

引用

页码：131 / +

页数：1

共 8 条

[1]

CORELLI JC, 1968, B AM PHYS SOC, V13, P359

[2]

CORELLI JC, PRIVATE COMMUNICATIO

[3] TEMPERATURE DEPENDENCE OF RADIATION DAMAGE IN SILICON [J].

FANG, PH ;

LIU, YM .

PHYSICS LETTERS, 1966, 20 (04) :344-&

[4]

FANG PH, 1967, ASTRONAUT ACTA, V13, P147

[5]

FANG PH, TO BE PUBLISHED

[6]

HIRATO M, LATTICE DEFECTS SEMI, P159

[7]

HISIGATI RR, LATTICE DEFECTS S ED, P159

[8] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW .

DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :86-&

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