IMPROVED METHOD FOR DEPTH PROFILING OF MULTILAYER STRUCTURES

被引：3

作者：

HORANYI, TS

TUTTO, P

ENDREDI, G

机构：

[1] SEMILAB Semiconductor Physics Laboratory Rt., H-1047 Budapest

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90153-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A modified, improved method has been developed for the dissolution of semiconductor materials containing a GaAlAs layer. This modified method involves the alternate application of anodic and cathodic processes in order to produce an arsenic-free surface for the carrier concentration measurement. The advantageous features of this method are demonstrated by comparison of the depth profiles of various semiconductor structures obtained by conventional and modified techniques.

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页码：143 / 148

页数：6

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