INFLUENCE OF SUBSTRATE-TEMPERATURE IN LASER ANNEALING OF ARSENIC-IMPLANTED SILICON

被引：4

作者：

NAKAMURA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1100 / 1101

页数：2

共 8 条

[1] DUAL-WAVELENGTH LASER ANNEALING [J].

AUSTON, DH ;

VENKATESAN, TNC ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :558-560

[2] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[3] CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY [J].

NAKAMURA, K ;

GOTOH, T ;

KAMOSHIDA, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3985-3989

[4] CHARACTERIZATION OF LASER-ANNEALED SI LAYERS BY ELLIPSOMETRY [J].

NAKAMURA, K ;

KAMOSHIDA, M .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2) :29-34

[5]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[6]

von Allmen M, 1979, LASER SOLID INTERACT, P43

[7] METASTABLE PHASES IN LASER-IRRADIATED PT-SI AND PD-SI THIN-FILMS [J].

VONALLMEN, M ;

LAU, SS ;

MAENPAA, M ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :84-86

[8] TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J].

WEAKLIEM, HA ;

REDFIELD, D .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1491-1493

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