CHARACTERIZATION OF LASER-ANNEALED SI LAYERS BY ELLIPSOMETRY

Laser annealing of ion-implanted Si layers has been studied extensively. Ellipsometry has been proved to be a fast and non-destructive method to evaluate ion-implanted layers. Refractive index, absorption coefficient and reflectivity can be obtained simultaneouly by this method. The amount of implantation induced damage and crystallinity recovery by annealing can be monitored by measuring optical constant changes. In this report, ellipsometry has been applied to investigate the effect of laser annealing on **7**5As** plus -implanted Si layers. Regrowth of the implanted layer by laser irradiation has been observed, and the results have been compared with those obtained by using other techniques such as electron diffraction analysis and carrier concentration measurement.