ANISOTROPIC ETCHING OF GERMANIUM

被引：33

作者：

LEANCU, R ^{[1
]}

MOLDOVAN, N ^{[1
]}

CSEPREGI, L ^{[1
]}

LANG, W ^{[1
]}

机构：

[1] IFT MUNICH,FHG,D-80686 MUNICH,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

ANISOTROPIC ETCHING; GERMANIUM;

D O I：

10.1016/0924-4247(94)00856-D

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study has been carried out in order to find an anisotropic etchant for Ge. Both basic and acidic etchants are investigated, with better results for the latter, showing that the chemical differences between Ge and Si are essential. The most probable chemical mechanisms responsible for acidic etching and anisotropy are discussed.

引用

页码：35 / 37

页数：3

共 8 条

[1]

BOGENSCHUTZ AF, 1967, ATZPRAXIS HALBLEITER, P85

[2] HYDROGEN-FLUORIDE DIFFUSION THROUGH A POLYIMIDE MEMBRANE [J].