LOW-LOAD FRICTION BEHAVIOR OF EPITAXIAL C-60 MONOLAYERS UNDER HERTZIAN CONTACT

被引:90
作者
SCHWARZ, UD
ALLERS, W
GENSTERBLUM, G
WIESENDANGER, R
机构
[1] UNIV HAMBURG, MICROSTRUCT RES CTR, D-20355 HAMBURG, GERMANY
[2] FAC UNIV NOTRE DAME PAIX, INTERDISCIPLINAIRE SPECT ELECTR LAB, B-5000 NAMUR, BELGIUM
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 20期
关键词
D O I
10.1103/PhysRevB.52.14976
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monolayers of C-60 molecules epitaxially grown on GeS(001) in ultrahigh vacuum were investigated by friction force microscopy in air. The frictional force F-f on the GeS substrate was found to be proportional to the normal force F-n in the first approximation, whereas the friction measured on the first C-60 monolayer fits excellently to a F-f proportional to F-n(2/3) dependence. This different frictional behavior causes a flip in contrast in spatially resolved friction force maps. Additionally, the second C-60 monolayer exhibited a lower friction than the first layer at normal forces below the critical force where the contrast flips. The measured data are analyzed using a generalized Hertzian theory, which considers capillary condensation.
引用
收藏
页码:14976 / 14984
页数:9
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