EFFECTS OF PHONON DISTRIBUTIONS ON HOT ELECTRONS IN SEMICONDUCTORS

被引：16

作者：

SATO, H

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1963年 / 18卷 / 01期

关键词：

D O I：

10.1143/JPSJ.18.55

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：55 / &

共 11 条

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[7] THE FIELD DEPENDENCE OF THE MOBILITY OF ELECTRONS IN NORMAL-GERMANIUM [J].

SATO, H .

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[8] IMPACT IONIZATION OF IMPURITIES IN GERMANIUM [J].

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[9] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].

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[10]

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