HOMOEPITAXIAL GROWTH OF SILICON ON ANODIZED POROUS SILICON

Homoepitaxial growth of Si(111) on monocrystalline porous silicon (PS) anodically produced has been investigated by means of electron spectroscopies, electron diffraction, scanning electron microscopy (SEM) and Rutherford backscattering spectrometry (RBS). Si depositions of ≤ 120 nm were performed on a pre-oxidized PS by using an electron beam evaporator. With increasing thickness of the deposited Si layer, the electron diffraction pattern evolved from a diffuse and weak "1 x 1" to a strong "1 x 1" (1 nm), further to a weak "7 x 7" (6 nm), and finally to sharp and strong "7 x 7" pattern (8-120 nm). This evolution is compared to ex-situ RBS data and SEM pictures taken after the Si growth of 120 nm. Both observed a channeling χmin of 2.6% and high-resolution SEM images for the epitaxial Si film showing a very smooth and flat surface are consistent with the in-situ diffraction data. These results are discussed in relation to the pore structure. © 1990.