HIGH-RESOLUTION ELECTRON-MICROSCOPY OF PLANAR INVERSION DOMAIN BOUNDARIES IN ALUMINUM NITRIDE

被引：18

作者：

MCCARTNEY, MR ^{[1
]}

YOUNGMAN, RA ^{[1
]}

TELLER, RG ^{[1
]}

机构：

[1] BP RES,CLEVELAND,OH 44128

来源：

ULTRAMICROSCOPY | 1992年 / 40卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0304-3991(92)90126-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

引用

页码：291 / 299

页数：9

共 16 条

[1] DIRECT OBSERVATION OF POLYTYPE PERIODICITIES IN BE-SI-O-N SYSTEM [J].