GAP GREEN LIGHT-EMITTING DIODES WITH P-N-P-N STRUCTURE

被引:11
作者
BEPPU, T
TOYAMA, M
KASAMI, A
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10.1143/JJAP.11.1338
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O59 [应用物理学];
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页码:1338 / &
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共 15 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]   ZN-TE COMPENSATED (GA, AL)AS DIODES WITH NEGATIVE RESISTANCE [J].
ARAI, Y ;
SAKUTA, M ;
SAKAI, K ;
ISHIDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (08) :1015-&
[3]   NEGATIVE RESISTANCE IN GAP ELECTROLUMINESCENT DIODES [J].
BHARGAVA, RN .
APPLIED PHYSICS LETTERS, 1969, 14 (06) :193-&
[4]   OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FROSCH, CJ ;
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&
[5]   EFFECT OF DONOR CONCENTRATION ON GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES [J].
DIERSCHKE, EG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :321-+
[6]   NEW RED PAIR LUMINESCENCE FROM GAP [J].
HENRY, CH ;
DEAN, PJ ;
CUTHBERT, JD .
PHYSICAL REVIEW, 1968, 166 (03) :754-&
[7]  
INOGUCHI T, 1969, SHARP TECH J, V8, P13
[8]   DOUBLE INJECTION IN GAP ELECTROLUMINESCENT DIODES [J].
MAEDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (01) :71-&
[9]   A TECHNIQUE FOR DETERMINING P-N JUNCTION DOPING PROFILES AND ITS APPLICATION TO GAP [J].
MCGAHAN, TE ;
HACKETT, WH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (08) :1182-&
[10]   OPTICAL PROPERTIES OF CD-O AND ZN-O COMPLEXES IN GAP [J].
MORGAN, TN ;
WELBER, B ;
BHARGAVA, RN .
PHYSICAL REVIEW, 1968, 166 (03) :751-&