ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURES

被引：24

作者：

SANCHEZDEHESA, J

SANCHEZROJAS, JL

LOPEZ, C

NICHOLAS, RJ

机构：

[1] UNIV AUTONOMA MADRID,CSIC,INST CIENCIA MAT,E-28049 MADRID,SPAIN

[2] UNIV OXFORD,DEPT PHYS,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[3] UNIV POLITECN MADRID,ESCUELA TECN SUPER INGN TELECOMUN,E-28040 MADRID,SPAIN

[4] UNIV CARLOS III MADRID,ESCUELA POLITECN SUPER,E-28913 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The addition of a piezoelectric field in AlGaAs/InGaAs/GaAs HEMT structures is shown to lead to enhanced electron densities and hence improved device performance. Growth of a strained InxGa1-xAs layer is in [111] A direction causes a piezoelectric field to be built into the quantum well of a pseudomorphic HEMT, which opposes the electric field due to charge transfer and hence lowers the confinement energy. This leads to carrier densities 50% larger than in equivalent [100] structures, with the wave function also spaced further away from the dopant impurities and the well interfaces. We expect these factors to give improved device performance.

引用

页码：1072 / 1074

页数：3