GAS-PRESSURE COMBUSTION SINTERING AND HOT ISOSTATIC PRESSING IN THE TI-SI-C SYSTEM

被引:21
作者
KLEMM, H [1 ]
TANIHATA, K [1 ]
MIYAMOTO, Y [1 ]
机构
[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN
关键词
D O I
10.1007/BF00363349
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The processing of materials in the Ti-Si-C system produced by gas pressure combustion sintering (GPCS) and hot isostatic pressing (HIP) was studied. By variation of the raw material composition it was possible to produce different materials containing Ti5Si3, Ti3SiC2, TiSi2, TiC, SiC and titanium. The different phase compositions of samples with the same reactants obtained by GPCS and HIP are due to the duration of each of the processes; in GPCS the equilibrium state was not achieved. The properties of the specimen are strongly related to their chemical behaviour during processing at high temperatures. Not all phases built up at the high temperatures during the GPCS and HIP processes are stable at lower temperatures, and some reactions occur during cooling, which influence densification, microstructure and properties of the bodies finally obtained.
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收藏
页码:1557 / 1562
页数:6
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