PREPARATION OF WB2-X SINGLE-CRYSTALS BY THE FLOATING-ZONE METHOD

被引：21

作者：

OTANI, S

ISHIZAWA, Y

机构：

[1] National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki, 305, 1-1, Namiki

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00155-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

WB2-x crystals were prepared over the entire composition range (B/W = 1.8-1.97). The WB2-x phase was found to melt incongruently. The crystal quality strongly depended on the content of the boron defects. The high quality crystals without subgrain boundaries were obtained in the composition range of B/W > 1.9. The crystal quality was found to be determined by the plastic deformation due to thermal stress in the cooling process after the growth.

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页码：81 / 84

页数：4

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