DEFECT STATES AT FLOATING AND DANGLING BONDS IN AMORPHOUS SI

[1] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[2] ENERGETICS OF SINGLE DANGLING AND FLOATING BONDS IN AMORPHOUS SI [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1156 - 1156

[3] THEORY OF FLUCTUATIONS AND LOCALIZED STATES IN AMORPHOUS TETRAHEDRALLY BONDED SOLIDS [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2764 - 2774

[4] JOANNOPOULOS JD, 1984, PHYSICS HYDROGENATED, V2

[5] SPIN POLARIZATION AND ATOMIC GEOMETRY OF THE SI(111) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1910 - 1913

[6] PANKOVE JI, 1984, SEMICONDUCTORS SEMIM, V21

[7] MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (13) : 1344 - 1347

[8] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982

[9] DEFECT DYNAMICS AND THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3479 - 3482

[10] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE - COMMENT [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (26) : 2824 - 2824

[1] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[2] ENERGETICS OF SINGLE DANGLING AND FLOATING BONDS IN AMORPHOUS SI [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1156 - 1156

[3] THEORY OF FLUCTUATIONS AND LOCALIZED STATES IN AMORPHOUS TETRAHEDRALLY BONDED SOLIDS [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2764 - 2774

[4] JOANNOPOULOS JD, 1984, PHYSICS HYDROGENATED, V2

[5] SPIN POLARIZATION AND ATOMIC GEOMETRY OF THE SI(111) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1910 - 1913

[6] PANKOVE JI, 1984, SEMICONDUCTORS SEMIM, V21

[7] MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (13) : 1344 - 1347

[8] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982

[9] DEFECT DYNAMICS AND THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3479 - 3482

[10] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE - COMMENT [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (26) : 2824 - 2824