MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON

[1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846

[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563

[4] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (04) : 360 - 363

[5] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[6] FRITZSCHE H, 1977, AMORPHOUS LIQUID SEM, P3

[7] KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790

[8] ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L197 - L200

[9] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982

[10] SUBMICROSTRUCTURAL CLUSTERS AND DOPING OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 383 - 387

[1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846

[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563

[4] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (04) : 360 - 363

[5] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[6] FRITZSCHE H, 1977, AMORPHOUS LIQUID SEM, P3

[7] KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790

[8] ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L197 - L200

[9] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982

[10] SUBMICROSTRUCTURAL CLUSTERS AND DOPING OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 383 - 387