FABRY-PEROT OPTICAL-INTENSITY MODULATOR AT 1.3 MU-M IN SILICON

被引:21
作者
XIAO, X
STURM, JC
GOEL, KK
SCHWARTZ, PV
机构
[1] Department of Electrical Engineering, Princeton University, Princeton, NJ
基金
美国国家科学基金会;
关键词
Fabry-Perot Cavity - Optical Intensity Modulator - Optical Phase Modulator - SIMOX Process;
D O I
10.1109/68.79763
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a new type of all silicon surface-normal optical intensity modulator at 1.3-mu-m, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 x 10(3) A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.
引用
收藏
页码:230 / 231
页数:2
相关论文
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