FABRY-PEROT OPTICAL-INTENSITY MODULATOR AT 1.3 MU-M IN SILICON

被引：21

作者：

XIAO, X

STURM, JC

GOEL, KK

SCHWARTZ, PV

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton, NJ

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期

基金：

美国国家科学基金会;

关键词：

Fabry-Perot Cavity - Optical Intensity Modulator - Optical Phase Modulator - SIMOX Process;

D O I：

10.1109/68.79763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a new type of all silicon surface-normal optical intensity modulator at 1.3-mu-m, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 x 10(3) A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.

引用

页码：230 / 231

页数：2