SUBGRAIN BOUNDARY MIGRATION DURING CREEP OF LIF .1. RECOMBINATION OF SUBGRAIN BOUNDARIES

被引：35

作者：

BIBERGER, M

BLUM, W

机构：

[1] Institut für Werkstoffwissenschaften, Lehrstuhl I, University of Erlangen-Nürnberg, Erlangen

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1992年 / 65卷 / 03期

关键词：

D O I：

10.1080/01418619208201548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The multiple-etching method has been applied to observe the migration of subgrain boundaries during compressive creep of pure and 100 p.p.m. MgF2-doped <100>-oriented single crystals of LiF at 923 K and 2.0 MPa and at 773 K and 9.0 MPa. Groups of neighbouring subgrain boundaries migrate in the same direction. The average number of boundaries per group is 2.9 and > 3 in the steady-state and transient ranges of creep, respectively. Boundaries of opposite sign migrate towards each other at approximately constant speed, until they collide. The collision leads to recombination of the subgrain boundaries. In one case complete dissolution of the colliding boundaries was observed. The dynamic equilibrium of formation and recombination of boundaries keeps the subgrain structure equiaxed during steady-state creep.

引用

页码：757 / 770

页数：14

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