NANOMETER-RESOLUTION SCANNING AUGER-ELECTRON MICROSCOPY

被引：41

作者：

HEMBREE, GG ^{[1
]}

VENABLES, JA ^{[1
]}

机构：

[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,E SUSSEX,ENGLAND

来源：

ULTRAMICROSCOPY | 1992年 / 47卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0304-3991(92)90188-P

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

New instrumental developments are described, based on STEM optics and through-the-lens electron detection, which allow scanning Auger electron microscopy (SAM) to be performed at the nanometer level. Example Auger images with 3 nm resolution are shown of silver islands deposited on Si(100). A consistent definition of SAM edge resolution is given with emphasis placed on the distinction between image and analytical resolution. The structure of ideal samples for testing resolution, at the level where localization effects may become important, is discussed.

引用

页码：109 / 120

页数：12

共 41 条

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