学术探索
学术期刊
新闻热点
数据分析
智能评审

CURRENT-NOISE-POWER SPECTRA OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：23
作者：
BOUDRY, JM
ANTONUK, LE
机构：
[1] Department of Radiation Oncology, University of Michigan, Ann Arbor
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 04期
关键词：
D O I：
10.1063/1.357614
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-noise-power spectra of thin-film transistors (TFTs) fabricated from hydrogenated amorphous silicon were measured. TFTs with aspect ratios ranging from 1:1 to 16:1 were examined in both the conducting and nonconducting modes. In the conducting mode, the noise levels could be predicted to within an order of magnitude by theories developed for crystalline metal-oxide field-effect transistors. In the nonconducting mode. the noise was found to scale with the TFT leakage current in a power-law fashion.
引用
收藏
页码：2529 / 2534
页数：6
相关论文
共 14 条
[1]   DEMONSTRATION OF MEGAVOLTAGE AND DIAGNOSTIC-X-RAY IMAGING WITH HYDROGENATED AMORPHOUS-SILICON ARRAYS [J].
ANTONUK, LE ;
BOUDRY, J ;
HUANG, WD ;
MCSHAN, DL ;
MORTON, EJ ;
YORKSTON, J ;
LONGO, MJ ;
STREET, RA .
MEDICAL PHYSICS, 1992, 19 (06) :1455-1466
[2]  
ANTONUK LE, 1993, SPIE, V1896, P18
[3]  
BUCKINGHAM MJ, 1983, NOISE ELECTRONIC DEV, P32
[4]  
CHO GS, 1990, MATER RES SOC SYMP P, V192, P393, DOI 10.1557/PROC-192-393
[5]  
HOFSTEIN SR, 1966, FIELD EFFECT TRANSIS, P113
[6]   EXPERIMENTAL STUDIES ON 1-F NOISE [J].
HOOGE, FN ;
KLEINPENNING, TGM ;
VANDAMME, LKJ .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532
[7]   THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES [J].
JORDAN, AG ;
JORDAN, NA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :148-+
[8]   CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J].
KLAASSEN, FM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :887-+
[9]  
PAI SY, THESIS U MINNESOTA
[10]   BIAS DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
POWELL, MJ ;
VANBERKEL, C ;
FRENCH, ID ;
NICHOLLS, DH .
APPLIED PHYSICS LETTERS, 1987, 51 (16) :1242-1244
12