IMPURITY GRADIENTS IN TE-DOPED GAP LIQUID PHASE EPITAXY LAYERS

被引：15

作者：

SAUL, RH

HACKETT, WH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 08期

关键词：

D O I：

10.1063/1.1659464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3554 / &

共 10 条

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[8] DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS [J].

SAUL, RH ;

HACKETT, WH .

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[9] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J].

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[10] SOLUBILITY AND ELECTRICAL BEHAVIOR OF ZINC SULFUR SELENIUM AND TELLURIUM IN GALLIUM PHOSPHIDE [J].

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