DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS

[1] BRICE JC, 1965, GROWTH CRYSTALS MELT, P80

[2] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[3] OXYGEN DOPING OF SOLUTION-GROWN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 494 - &

[4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +

[5] SATURATION OF ZN-O COMPLEXES IN GAP DIODES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (11) : 2072 - &

[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[7] HILDEBRAND J, 1960, RCA REV

[8] JORDAN AS, 1970, 145 LOS ANG M SOC PA

[9] GALLIUM PHOSPHIDE DOUBLE-EPITAXIAL DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 993 - &

[10] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &

[1] BRICE JC, 1965, GROWTH CRYSTALS MELT, P80

[2] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[3] OXYGEN DOPING OF SOLUTION-GROWN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 494 - &

[4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +

[5] SATURATION OF ZN-O COMPLEXES IN GAP DIODES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (11) : 2072 - &

[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[7] HILDEBRAND J, 1960, RCA REV

[8] JORDAN AS, 1970, 145 LOS ANG M SOC PA

[9] GALLIUM PHOSPHIDE DOUBLE-EPITAXIAL DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 993 - &

[10] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &