SATURATION OF ZN-O COMPLEXES IN GAP DIODES

被引：17

作者：

HACKETT, WH

ROSENZWE.W

JAYSON, JS

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 11期

关键词：

D O I：

10.1109/PROC.1969.7469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The red electroluminescence in gallium phosphide at the maximum quantum efficiency is a constant, independent of injection efficiency, for a series of liquid-phase epitaxially grown diodes which have common Zn and O-doped p-type substrates and variable Te-doped n-type layers. This behavior and the subsequent decrease in quantum efficiency with increasing diode current are both explained in terms of the saturation of Zn-O complexes by captured electrons in the p region. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：2072 / &

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