GEOMETRICAL STRUCTURE OF CLEAVED SI (111) SURFACES

被引：33

作者：

MONCH, W

AUER, PP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1230 / 1236

页数：7

共 33 条

[1] SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1410 - 1417
[2] ASSMANN J, 1974, ELECTRON FIS APL, P17
[3] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[4] AUER PP, UNPUBLISHED
[5] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[6] OPTICAL DETECTION OF SURFACE-STATES IN SEMICONDUCTORS
CHIAROTTI, G
NANNARONE, S
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 739 - 747
[7] NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON
CIRACI, S
BATRA, IP
[J]. SOLID STATE COMMUNICATIONS, 1976, 18 (08) : 1149 - 1152
[8] FORSTMANN F, 1977, PHOTOEMISSION SURFAC
[9] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS
HANEMAN, D
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &
[10] SURFACE RECONSTRUCTION ON SEMICONDUCTORS
HARRISON, WA
[J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19