OPTICAL DETECTION OF SURFACE-STATES IN SEMICONDUCTORS

被引：10

作者：

CHIAROTTI, G

NANNARONE, S

机构：

[1] UNIV ROME,IST FIS,I-00100 ROME,ITALY

[2] CNR,NAZL STRUTTURA MAT GRP,I-00131 ROME,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1007/BF02725819

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：739 / 747

页数：9

共 15 条

[1] SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1410 - 1417
[2] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE
CHIAROTTI, G
DELSIGNO.G
NANNARONE, S
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (16) : 1170 - +
[3] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[4] OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7
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NANNARONE, S
[J]. SURFACE SCIENCE, 1975, 49 (01) : 315 - 317
[5] EFFECT OF AN ELECTRIC-FIELD ON OPTICAL GAP OF GE(111)2X1 SURFACE-STATES
CHIAROTTI, G
NANNARONE, S
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (14) : 934 - 937
[6] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[7] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[8] ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON
HANEMAN, D
[J]. PHYSICAL REVIEW, 1968, 170 (03): : 705 - &
[9] DETERMINATION OF SURFACE STATES AT CLEAN, CLEAVED SILICON SURFACES FROM PHOTOCONDUCTIVITY
MULLER, W
MONCH, W
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (05) : 250 - &
[10] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI
PANDEY, KC
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1450 - 1453

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