PIEZORESISTIVE PRESSURE SENSORS BASED ON POLYCRYSTALLINE SILICON

被引：130

作者：

MOSSER, V ^{[1
]}

SUSKI, J ^{[1
]}

GOSS, J ^{[1
]}

OBERMEIER, E ^{[1
]}

机构：

[1] TECH UNIV BERLIN,FACHBEREICH ELEKTROTECH,W-1000 BERLIN 65,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 02期

关键词：

D O I：

10.1016/0924-4247(91)85020-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline Si (poly-Si) has found various applications in microelectronics and micromechanical devices such as pressure sensors, accelerometers and actuators. Poly-Si films deposited on an oxidized Si substrate can combine the excellent mechanical properties of Si with the efficient electrical insulation of poly-Si piezoresistors, so that improved stability and high-temperature operation can be obtained. Different poly-Si fabrication techniques are reviewed with emphasis on their applications to pressure sensors. The theoretical interpretation and models of the piezoresistivity in poly-Si and experimental results are presented. The calculation of the longitudinal and transverse gauge factors and their correlation with the crystallographic structure of the poly-Si film are discussed. The possibility of sensor performance optimization including mechanical, temperature and piezoresistive properties of a device is demonstrated. Two examples of commercially manufactured poly-Si sensors and an example of a new poly-Si technology are also presented.

引用

页码：113 / 132

页数：20