ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAINP/ALINP QUANTUM-WELLS ON 10-DEGREES-OFF GAAS SUBSTRATES USING ETHYLDIMETHYLINDIUM

被引：9

作者：

WANG, TY

WELCH, DF

SCIFRES, DR

TREAT, DW

BRINGANS, RD

STREET, RA

ANDERSON, GB

机构：

[1] XEROX CORP,PALO ALTO RES CTR,ELECTR MAT LAB,PALO ALTO,CA 94304

[2] SPECTRA DIODE LABS,SAN JOSE,CA 95129

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInP/AlInP quantum wells (QWs) have been grown on (100) and 10-degrees-off (100) GaAs substrates in an organometallic vapor phase epitaxy (OMVPE) reactor at reduced pressure. Photoluminescence (PL) studies revealed an increase in peak energy and narrowing in linewidth for the 10-degrees-off QWs, due to the suppression of the formation of ordered microstructures during the OMVPE process. Low temperature PL results of GaInP/AlInP QWs as thin as 13 angstrom are presented for the first time. The 10-degrees-off QW showed a dominant peak at 551 nm, the shortest wavelength ever reported in GaInP/AlInP QWs. The origin of PL for the 13-angstrom QWs is, however, different from that for thicker QWs as a result of the transfer of electrons to localized states in the barrier layer.

引用

页码：1007 / 1009

页数：3