FEMTOSECOND ELECTRON-TRANSPORT IN QUANTUM-WELL LASER STRUCTURES WITH STEP-GRADED CONFINEMENT LAYERS

被引:7
作者
MARCINKEVICIUS, S
OLIN, U
WALLIN, J
STREUBEL, K
LANDGREN, G
机构
[1] INST OPT RES,S-10044 STOCKHOLM,SWEDEN
[2] ROYAL INST TECHNOL,SEMICOND LAB,S-16440 KISTA,SWEDEN
关键词
D O I
10.1063/1.113915
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved photoluminescence measurements of electron transport are reported in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a steplike grading profile. It is found that electron transfer over the graded-gap region occurs on a subpicosecond time scale. The upper time limit for the electrons to pass one step of 22 nm width is 250 fs. The fast transfer times imply that the electron transport across the graded region is not affected by the presence of the steps.© 1995 American Institute of Physics.
引用
收藏
页码:2098 / 2100
页数:3
相关论文
共 13 条
  • [1] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY
    BURKHARD, H
    DINGES, HW
    KUPHAL, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 655 - 662
  • [2] BLOCH TRANSPORT OF ELECTRONS AND HOLES IN SUPERLATTICE MINIBANDS - DIRECT MEASUREMENT BY SUBPICOSECOND LUMINESCENCE SPECTROSCOPY
    DEVEAUD, B
    SHAH, J
    DAMEN, TC
    LAMBERT, B
    REGRENY, A
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (24) : 2582 - 2585
  • [3] CAPTURE OF PHOTOEXCITED CARRIERS BY A LASER STRUCTURE
    DEVEAUD, B
    CLEROT, F
    REGRENY, A
    FUJIWARA, K
    MITSUNAGA, K
    OHTA, J
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2646 - 2648
  • [4] ULTRAFAST ENERGY RELAXATION PHENOMENA OF PHOTOEXCITED MINORITY ELECTRONS IN P-GAAS
    FURUTA, T
    YOSHII, A
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3607 - 3609
  • [5] SUBPICOSECOND THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED ELECTRONS AND HOLES IN INTRINSIC AND P-TYPE GAAS AND INP
    HOHENESTER, U
    SUPANCIC, P
    KOCEVAR, P
    ZHOU, XQ
    KUTT, W
    KURZ, H
    [J]. PHYSICAL REVIEW B, 1993, 47 (20): : 13233 - 13245
  • [6] DENSITY-DEPENDENT TRANSITION FROM ELECTRON TO AMBIPOLAR VERTICAL TRANSPORT IN SHORT-PERIOD GAAS-AIGAAS SUPERLATTICES
    LAMBERT, B
    DEVEAUD, B
    CHOMETTE, A
    REGRENY, A
    SERMAGE, B
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 513 - 517
  • [7] COOLING OF HOT CARRIERS IN 3-DIMENSIONAL AND TWO-DIMENSIONAL GA0.47IN0.53AS
    LOBENTANZER, H
    STOLZ, W
    NAGLE, J
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5234 - 5244
  • [8] PHOTOEXCITED CARRIER TRANSPORT IN INGAASP/INP QUANTUM-WELL LASER STRUCTURE
    MARCINKEVICIUS, S
    OLIN, U
    WALLIN, J
    STREUBEL, K
    LANDGREN, G
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2057 - 2059
  • [9] OHLANDER U, 1991, 1MTH EUR C OPT COMM, P341
  • [10] RECOMBINATION DYNAMICS AT INP LIQUID INTERFACES
    ROSENWAKS, Y
    THACKER, BR
    NOZIK, AJ
    SHAPIRA, Y
    HUPPERT, D
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (40) : 10421 - 10429