XENON MIGRATION AND TRAPPING IN DOPED THO2

被引：37

作者：

MATZKE, H

机构：

来源：

JOURNAL OF NUCLEAR MATERIALS | 1967年 / 21卷 / 02期

关键词：

D O I：

10.1016/0022-3115(67)90149-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：190 / &

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