OPTICAL STUDIES ON THE ELECTRIC-FIELD DEPENDENCE OF EXCITED DONOR STATES IN SILICON

被引:3
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LARSSON, K
GRIMMEISS, HG
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10.1063/1.341144
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O59 [应用物理学];
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页码:4524 / 4529
页数:6
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共 12 条
[1]   OBSERVATION OF SPIN-TRIPLET STATES FOR DOUBLE DONORS IN SILICON [J].
BERGMAN, K ;
GROSSMANN, G ;
GRIMMEISS, HG .
PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2827-2830
[2]  
COHENTANNOUDJI C, 1977, QUANTUM MECHANICS, V2, P1281
[3]   THEORY OF POOLE-FRENKEL CONDUCTION IN LOW-MOBILITY SEMICONDUCTORS [J].
CONNELL, GAN ;
CAMPHAUSEN, DL ;
PAUL, W .
PHILOSOPHICAL MAGAZINE, 1972, 26 (03) :541-+
[4]   ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].
GRIMMEISS, HG ;
JANZEN, E ;
SKARSTAM, B .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745
[5]  
HARTKE JL, 1968, J APPL PHYS, V39, P4811
[6]   LINEWIDTHS OF THE ELECTRONIC EXCITATION-SPECTRA OF DONORS IN SILICON [J].
JAGANNATH, C ;
GRABOWSKI, ZW ;
RAMDAS, AK .
PHYSICAL REVIEW B, 1981, 23 (05) :2082-2098
[7]  
JANZEN E, 1982, J APPL PHYS, V53, P7520, DOI 10.1063/1.330161
[8]  
Jaros M, 1982, DEEP LEVELS SEMICOND
[9]   INHOMOGENEOUS BROADENING OF LYMAN-SERIES ABSORPTION OF SIMPLE HYDROGENIC DONORS [J].
LARSEN, DM .
PHYSICAL REVIEW B, 1976, 13 (04) :1681-1691
[10]   OPTICAL TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN SEMICONDUCTORS USING FOURIER TECHNIQUE [J].
LARSSON, K .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1987, 20 (12) :1480-1483