EXPERIMENTS ON THE PHOTOMAGNETOELECTRIC EFFECT IN GERMANIUM

[1] AIGRAIN P, 1953, CR HEBD ACAD SCI, V236, P672

[2] AIGRAIN P, 1953, CR HEBD ACAD SCI, V236, P595

[3] AIGRAIN P, 1954, ANN RADIOELEC COMPAG, V9, P219

[4] BRAND, 1957, B AM PHYS SOC 2, V2, P171

[5] INVESTIGATIONS OF SURFACE RECOMBINATION VELOCITIES ON GERMANIUM BY THE PHOTOELECTROMAGNETIC METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (11) : 636 - 640

[6] DEPTH OF SURFACE DAMAGE DUE TO ABRASION ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 593 - 597

[7] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS - THEORY [J]. PHYSICAL REVIEW, 1957, 105 (03): : 823 - 829

[8] GROSVALET G, 1954, ANN RADIOELEC COMPAG, V9, P360

[9] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[10] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[1] AIGRAIN P, 1953, CR HEBD ACAD SCI, V236, P672

[2] AIGRAIN P, 1953, CR HEBD ACAD SCI, V236, P595

[3] AIGRAIN P, 1954, ANN RADIOELEC COMPAG, V9, P219

[4] BRAND, 1957, B AM PHYS SOC 2, V2, P171

[5] INVESTIGATIONS OF SURFACE RECOMBINATION VELOCITIES ON GERMANIUM BY THE PHOTOELECTROMAGNETIC METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (11) : 636 - 640

[6] DEPTH OF SURFACE DAMAGE DUE TO ABRASION ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 593 - 597

[7] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS - THEORY [J]. PHYSICAL REVIEW, 1957, 105 (03): : 823 - 829

[8] GROSVALET G, 1954, ANN RADIOELEC COMPAG, V9, P360

[9] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[10] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153