ELECTRON-MOBILITY IN ALXGA1-XAS

被引：18

作者：

NEUMANN, H ^{[1
]}

FLOHRER, U ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT PHYS,LEIPZIG,EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1002/pssa.2210250258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K145 / K147

页数：3

共 17 条

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[3]

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ENSTROM, RE ;

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[8] ELECTRON-PHONON INTERACTION AND INTER-VALLEY SCATTERING IN SEMICONDUCTORS [J].

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[9] INFRARED REFLECTION SPECTRA OF GA1-XA1XAS MIXED CRYSTALS [J].

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[10] DISORDER SCATTERING IN SOLID-SOLUTIONS OF III-V SEMICONDUCTING COMPOUNDS [J].

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