ELECTRONIC RAMAN-SCATTERING ACROSS THE UNCONVENTIONAL CHARGE GAP IN FESI

被引：60

作者：

NYHUS, P

COOPER, SL

FISK, Z

机构：

[1] UNIV ILLINOIS,FREDERICK SELTZ MAT RES LAB,URBANA,IL 61801

[2] FLORIDA STATE UNIV,DEPT PHYS,TALLAHASSEE,FL 32306

[3] FLORIDA STATE UNIV,NATL HIGH MAGNET FIELD LAB,TALLAHASSEE,FL 32306

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.51.15626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The unusual charge gap in FeSi is investigated using Raman scattering. These studies reveal (i) a rapid suppression of low-frequency (<760 cm-1) electronic scattering below ∼250 K, (ii) a redistribution of low-frequency electronic scattering strength to interband transitions near Δ0∼1200 cm-1, and (iii) a dramatic decrease in phonon linewidths below 250 K, indicating a strong coupling between low-frequency charge excitations and the lattice in FeSi. © 1995 The American Physical Society.

引用

页码：15626 / 15629

页数：4

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