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DEEP HOLE TRAPS IN VPE P-TYPE INP
被引:9
作者
:
INUISHI, M
论文数:
0
引用数:
0
h-index:
0
INUISHI, M
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
WESSELS, BW
机构
:
来源
:
ELECTRONICS LETTERS
|
1981年
/ 17卷
/ 19期
关键词
:
D O I
:
10.1049/el:19810479
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:685 / 686
页数:2
相关论文
共 7 条
[1]
PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
[J].
CHIAO, SH
论文数:
0
引用数:
0
h-index:
0
CHIAO, SH
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
:466
-468
[2]
HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES
[J].
CHOUDHURY, ANMM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
CHOUDHURY, ANMM
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
ROBSON, PN
.
ELECTRONICS LETTERS,
1979,
15
(09)
:247
-249
[3]
THE CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE INP
[J].
INUISHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
INUISHI, M
;
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
WESSELS, BW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(12)
:2747
-2750
[4]
METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP
[J].
KAMIMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
KAMIMURA, K
;
论文数:
引用数:
h-index:
机构:
SUZUKI, T
;
KUNIOKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
KUNIOKA, A
.
APPLIED PHYSICS LETTERS,
1981,
38
(04)
:259
-261
[5]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[6]
HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR-CELLS
[J].
TURNER, GW
论文数:
0
引用数:
0
h-index:
0
TURNER, GW
;
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
;
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
.
APPLIED PHYSICS LETTERS,
1980,
37
(04)
:400
-402
[7]
WHITE AM, 1977, I PHYS C SER A, V33, P58
←
1
→
共 7 条
[1]
PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
[J].
CHIAO, SH
论文数:
0
引用数:
0
h-index:
0
CHIAO, SH
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
:466
-468
[2]
HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES
[J].
CHOUDHURY, ANMM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
CHOUDHURY, ANMM
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
ROBSON, PN
.
ELECTRONICS LETTERS,
1979,
15
(09)
:247
-249
[3]
THE CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE INP
[J].
INUISHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
INUISHI, M
;
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
WESSELS, BW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(12)
:2747
-2750
[4]
METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP
[J].
KAMIMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
KAMIMURA, K
;
论文数:
引用数:
h-index:
机构:
SUZUKI, T
;
KUNIOKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA KU,TOKYO 157,JAPAN
KUNIOKA, A
.
APPLIED PHYSICS LETTERS,
1981,
38
(04)
:259
-261
[5]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[6]
HIGH-EFFICIENCY INP HOMOJUNCTION SOLAR-CELLS
[J].
TURNER, GW
论文数:
0
引用数:
0
h-index:
0
TURNER, GW
;
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
;
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
.
APPLIED PHYSICS LETTERS,
1980,
37
(04)
:400
-402
[7]
WHITE AM, 1977, I PHYS C SER A, V33, P58
←
1
→