DONOR-ACCEPTOR-TYPE COMPLEX IN GAAS

被引：6

作者：

REYNOLDS, DC

ALMASSY, RJ

LITTON, CW

NAM, SB

MCCOY, GL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5336 / 5338

页数：3

共 13 条

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[2] EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR
BAILEY, PT
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 588 - &
[3] FREE-EXCITON ENERGY-SPECTRUM IN GAAS
NAM, SB
REYNOLDS, DC
LITTON, CW
ALMASSY, RJ
COLLINS, TC
WOLFE, CM
[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 761 - 767
[4] ZEEMAN STUDIES OF PHOTOLUMINESCENCE OF EXCITED TERMINAL STATES OF A BOUND-EXCITON-DONOR COMPLEX IN GAAS
REYNOLDS, DC
LITTON, CW
COLLINS, TC
NAM, SB
WOLFE, CM
[J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5723 - 5728
[5] REYNOLDS DC, 1977, I PHYS C SER B, V33, P129
[6] Rossi J. A., 1970, Solid State Communications, V8, P2021, DOI 10.1016/0038-1098(70)90683-6
[7] PIEZOSPECTROSCOPIC AND MAGNETO-OPTICAL STUDY OF SN-ACCEPTOR IN GAAS
SCHAIRER, W
BIMBERG, D
KOTTLER, W
CHO, K
SCHMIDT, M
[J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3452 - 3467
[8] STRESS EFFECTS ON EXCITONS BOUND TO SHALLOW ACCEPTORS IN GAAS
SCHMIDT, M
MORGAN, TN
SCHAIRER, W
[J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5002 - 5007
[9] POLARITON REFLECTANCE AND PHOTOLUMINESCENCE IN HIGH-PURITY GAAS
SELL, DD
STOKOWSKI, SE
DINGLE, R
DILORENZO, JV
[J]. PHYSICAL REVIEW B, 1973, 7 (10) : 4568 - 4586
[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS
VANVECHTEN, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

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