HIGH-PERFORMANCE FULLY PASSIVATED INALAS INGAAS INP HFET

被引：5

作者：

DICKMANN, J ^{[1
]}

HASPEKLO, H ^{[1
]}

GEYER, A ^{[1
]}

DAEMBKES, H ^{[1
]}

NICKEL, H ^{[1
]}

LOSCH, R ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST TELEKOM,RES CTR,W-6100 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; FIELD-EFFECT TRANSISTORS; MICROWAVE DEVICES;

D O I：

10.1049/el:19920409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of fully Si3N4 passivated lattice matched InAlAs/InGaAs/InP HFETs is reported. The DC IV-characteristics of 0.25-mu-m gate length multigate finger devices show no kink or loop effects indicating excellent material quality. The drain to source breakdown voltage is in excess of V(DB) > 5 V. From the DC device characterisation a maximum saturation current of 490 mA/mm and a maximum transconductance of 500 mS/mm have been measured. A maximum current gain cutoff frequency of f(T) = 100 GHZ and a maximum unilateral gain cutoff frequency as high as f(max) = 280 GHz have been achieved.

引用

页码：647 / 649

页数：3

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