BREAKDOWN OF THE VIRTUAL-CRYSTAL APPROXIMATION IN GE2X(GAAS)1-X

被引：10

作者：

HASS, KC

BAIRD, RJ

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3591

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3591 / 3594

页数：4

共 28 条

[1]

ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P532

[2]

BAIRD R, UNPUB

[3]

BARNETT SA, 1982, ELECTRON LETT, V81, P891

[4] RELATION BETWEEN THE ELECTRONIC STATES AND STRUCTURAL-PROPERTIES OF HG1-XCDXTEA [J].

CHEN, AB ;

SHER, A ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1674-1677

[5]

Davis L. C., 1985, Materials Science Forum, V4, P197, DOI 10.4028/www.scientific.net/MSF.4.197

[6] PROPERTIES OF (GAAS)1-XGE2X AND (GASB)1-XGE2X - CONSEQUENCES OF A STOCHASTIC GROWTH-PROCESS [J].

DAVIS, LC ;

HOLLOWAY, H .

PHYSICAL REVIEW B, 1987, 35 (06) :2767-2780

[7] THE EFFECTS OF SHORT-RANGE AND LONG-RANGE ORDER ON THE ENERGY GAPS OF (GAAS)1-XGE2X AND (GASB)1-XGE2X [J].

DAVIS, LC ;

HOLLOWAY, H .

SOLID STATE COMMUNICATIONS, 1987, 64 (01) :121-124

[8] ELECTRONIC-STRUCTURE OF PB1-XSRXS - APPLICATION OF THE HAYDOCK RECURSION METHOD [J].

DAVIS, LC .

PHYSICAL REVIEW B, 1983, 28 (12) :6961-6971

[9]

Ehrenreich H., 1976, SOLID STATE PHYS, P149

[10] ROLE OF CORRELATIONS IN (GASB)1-XGE2X ALLOYS [J].

GU, BL ;

NEWMAN, KE ;

FEDDERS, PA .

PHYSICAL REVIEW B, 1987, 35 (17) :9135-9148

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