THE CHARGE AND TRAP GENERATION IN THIN SIO2 LAYERS UNDER LOW-ENERGY ION-BOMBARDMENT

Charge and trap generation in thin thermal SiO2layers on silicon under 1.5 keV Ar+ion bombardment has been investigated by internal photoemission techniques. The long-range perturbation of inner Si-SiO2interface separated by 200 nm oxide from ion penetration layer was observed. Positive charge and Coulombic electron trap formation near the semiconductor surface have been associated with hole transport through oxide layer and their interaction with Si-SiO2interfacial defects. A new neutral-type electron trap generation in oxide bulk has been registered under ion bombardment or hole injection. This effect was attributed to hole-induced break of strained Si-O bonds produced during Si-SiO2system formation or by oxide radiation damage. © 1990, Taylor & Francis Group, LLC. All rights reserved.