LEC GROWTH OF LARGE GAAS SINGLE-CRYSTALS

被引：23

作者：

SHIBATA, M ^{[1
]}

SUZUKI, T ^{[1
]}

KUMA, S ^{[1
]}

INADA, T ^{[1
]}

机构：

[1] HITACHI CABLE LTD,HITAKA WORKS,SEMICOND SECT,HITACHI,IBARAKI 31914,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90363-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

As the origin of polycrystallization in LEC grown GaAs crystals, accumulation of dislocations has been studied by microscopic observation of polycrystallized crystals. It has been found that dislocations have a tendency to propagate perpendicular to the solid/liquid inter-face during growth. The shape of the interface near periphery of the growing crystal is usually concave towards the melt, this concave interface can lead to an accumulation of dislocations. This accumulation causes polycrystallization. By control of the growing interface shape, polycrystalline growth has successfully been suppressed. Using this technology, GaAs single crystals of 75 mm diameter and 500 mm long, of 100 mm diameter and 320 mm long, and of 150 mm diameter and 170 mm long have been obtained with good stability.

引用

页码：439 / 443

页数：5

共 4 条

[1] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

CHEN, RT ;

HOLMES, DE .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124

[2]

ELLIOTT AG, 1990, INT S SOL PROC ONT, P352

[3] MICROSCOPIC IDENTIFICATION OF DEFECTS PROPAGATING THROUGH THE CENTER OF SILICON AND INDIUM-DOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS USING X-RAY TOPOGRAPHY [J].

SCOTT, MP ;

LADERMAN, SS ;

ELLIOT, AG .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1280-1282

[4]

TOWER JP, 1989, 9TH INT C CRYST GROW

← 1 →