MICROSCOPIC IDENTIFICATION OF DEFECTS PROPAGATING THROUGH THE CENTER OF SILICON AND INDIUM-DOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS USING X-RAY TOPOGRAPHY

被引：19

作者：

SCOTT, MP ^{[1
]}

LADERMAN, SS ^{[1
]}

ELLIOT, AG ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV OPTOELECTR,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1280 / 1282

页数：3

共 11 条

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[2] LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].

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[3]

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[6] DIRECTIONS OF DISLOCATION LINES IN CRYSTALS OF AMMONIUM HYDROGEN OXALATE HEMIHYDRATE GROWN FROM SOLUTION [J].

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[7]

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[8]

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[9] DISLOCATION PROPAGATION IN CZOCHRALSKI GROWN GADOLINIUM GALLIUM GARNET (GGG) [J].

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[10] GROWTH OF LOW AND HOMOGENEOUS DISLOCATION DENSITY GAAS CRYSTAL BY IMPROVED LEC TECHNIQUE [J].

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