DISLOCATIONS IN GAAS

被引：33

作者：

JACOB, G ^{[1
]}

FARGES, JP ^{[1
]}

SCHEMALI, C ^{[1
]}

DUSEAUX, M ^{[1
]}

HALLAIS, J ^{[1
]}

BARTELS, WJ ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90480-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：245 / 258

页数：14

共 39 条

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[8] MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS [J].

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[9] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

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[10]

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