INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION

被引：44

作者：

DEKOCK, AJR ^{[1
]}

ROKSNOER, PJ ^{[1
]}

BOONEN, PGT ^{[1
]}

机构：

[1] PHILIPS RES LAB, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 30卷 / 03期

关键词：

D O I：

10.1016/0022-0248(75)90001-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：279 / 294

页数：16

共 49 条

[1]

ABE T, 1967, DENKI KAGAKU, V35, P149

[2] LOWERING OF BREAKDOWN VOLTAGE OF SEMICONDUCTOR SILICON DUE TO PRECIPITATION OF IMPURITY CARBON [J].

AKIYAMA, N ;

YATSURUGI, Y ;

ENDO, Y ;

IMAYOSHI, Z .

APPLIED PHYSICS LETTERS, 1973, 22 (12) :630-631

[3]

AMELINCKX S, REPORT LAKE PLACID C, P3

[4] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[5] GENERAL TREATMENT OF CONDUCTION ELECTRON REDISTRIBUTION DUE TO POINT DEFECT COMPLEXES AND LATTICE DISTORTION IN NOBLE METALS [J].

BENNEMANN, KH .

PHYSICAL REVIEW, 1963, 130 (05) :1763-&

[6] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

BERNEWITZ, LI ;

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :277-279

[7]

BERNEWITZ LI, 1973, PHYS STATUS SOLIDI A, V16, P579, DOI 10.1002/pssa.2210160228

[8] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].

CHAUDHURI, AR ;

PATEL, JR ;

RUBIN, LG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&

[9] X-RAY TOPOGRAPHIC OBSERVATION OF MOVING DISLOCATIONS IN SILICON CRYSTALS [J].

CHIKAWA, J ;

ABE, T ;

FUJIMOTO, I .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :295-&

[10] NEW X-RAY TOPOGRAPHIC TECHNIQUE FOR DETECTION OF SMALL DEFECTS IN HIGHLY PERFECT CRYSTALS [J].

CHIKAWA, JI ;

ASAEDA, Y ;

FUJIMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1922-&

← 1 2 3 4 5 →