INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION

被引：44

作者：

DEKOCK, AJR ^{[1
]}

ROKSNOER, PJ ^{[1
]}

BOONEN, PGT ^{[1
]}

机构：

[1] PHILIPS RES LAB, EINDHOVEN, NETHERLANDS

来源：

关键词：

D O I：

10.1016/0022-0248(75)90001-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：279 / 294

页数：16

共 49 条

[41]

RAVI KV, 1973, SEMICONDUCTOR SILICO, P136

[42]

SAKHAROV BA, 1969, INORG MATER, V5, P188

[43]

SIRTL E, 1961, Z METALLKD, V52, P529

[44] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

VANWIERINGEN, A ;

WARMOLTZ, N .

PHYSICA, 1956, 22 (10) :849-865

[46]

VIEWEGGUTBERLET FG, 1973, SEMICONDUCTOR SILICO, P119

[47]

WATKINS GD, 1968, RADIATION EFFECTS SE

[48] DIFFUSION OF GROUP-V IMPURITY IN SILICON [J].

YOSHIDA, M .

[49]

[No title captured]