THE MEASUREMENT OF SURFACE RECOMBINATION VELOCITY ON SILICON

被引：6

作者：

BENNY, AH

MORTEN, FD

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 468期

关键词：

D O I：

10.1088/0370-1328/72/6/309

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1007 / 1012

页数：6

共 10 条

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[4]

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[5]

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SCHULTZ, W .

ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03) :319-334

[7]

HARTEN HU, PHILIPS RES REP

[8] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[9] DOUBLE MONOCHROMATOR OPTICAL SYSTEM BASED UPON IDEAS OF CZERNY AND TURNER [J].

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[10]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P76

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