ANTISITE DEFECT IN GAAS AND AT THE GAAS-ALAS INTERFACE

被引：9

作者：

LINCHUNG, PJ

REINECKE, TL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：443 / 446

页数：4

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