ELECTRONIC-STRUCTURE OF SIO2(111) THIN-FILM

被引：10

作者：

CIRACI, S

ELLIALTIOGLU, S

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 05期

关键词：

D O I：

10.1016/0038-1098(81)90580-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：587 / 589

页数：3

共 12 条

[1]

CHELIKOWSLY JR, 1976, PHYS REV B, V15, P4020

[2] NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON [J].

CIRACI, S ;

BATRA, IP .

SOLID STATE COMMUNICATIONS, 1976, 18 (08) :1149-1152

[3] ELECTRONIC-ENERGY-STRUCTURE CALCULATIONS OF SILICON AND SILICON DIOXIDE USING EXTENDED TIGHT-BINDING METHOD [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW B, 1977, 15 (10) :4923-4934

[4] ELECTRONIC-STRUCTURE OF (111) SURFACE OF SEMICONDUCTORS [J].

CIRACI, S ;

BATRA, IP ;

TILLER, WA .

PHYSICAL REVIEW B, 1975, 12 (12) :5811-5823

[5] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[6] SURFACE ELECTRONIC PROPERTIES OF D-BAND PEROVSKITES - STUDY OF THE PI-BANDS [J].

ELLIALTIOGLU, S ;

WOLFRAM, T .

PHYSICAL REVIEW B, 1978, 18 (08) :4509-4525

[7] CORE-ELECTRON EXCITATION-SPECTRA OF SI, SIO, AND SIO2 [J].

KOMA, A ;

LUDEKE, R .

PHYSICAL REVIEW LETTERS, 1975, 35 (02) :107-110

[8] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J].

LAUGHLIN, RB ;

JOANNOPOULOS, JD ;

CHADI, DJ .

PHYSICAL REVIEW B, 1980, 21 (12) :5733-5744

[9] ELECTRONIC-STRUCTURE, SPECTRA, AND PROPERTIES OF 4=2-COORDINATED MATERIALS .1. CRYSTALLINE AND AMORPHOUS SIO-2 AND GEO-2 [J].

PANTELIDES, ST ;

HARRISON, WA .

PHYSICAL REVIEW B, 1976, 13 (06) :2667-2691

[10] SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES - (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO2 [J].

POLLMANN, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (10) :5524-5544

← 1 2 →