BAND-GAPS IN SOME GROUP-IV MATERIALS - A THEORETICAL-ANALYSIS

被引：25

作者：

CORKILL, JL ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.47.10304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effects of expansion of the lattice on band-edge levels in Si, Ge, Sn, and SiSn. The variation in the gap in the Si-Ge-Sn series can be explained as moving along a universal curve of the variation of band-edge levels with the combined effect of volume and potential. For all of the materials studied, the gap at low volumes is from GAMMA to X. There is a small range of volumes where the gap is from GAMMA to L, and at high volumes the gap is direct until it closes. Thus, in addition to the usual process of applying postive pressure to close the gap, applying negative pressure also causes band overlap and metallization.

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页码：10304 / 10309

页数：6

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